MITEQ's extensive amplifier product line include moderate band amplifiers to broadband amplifiers. Our amplifier designs include ultra-low noise amplifiers, low noise amplifiers, high power amplifiers, GaAs FET amplifier and Bipolar Amplifiers . Consisting of over 4,000 amplifier models, we manufacture the largest standard amplifier product line available today.
Additional Amplifier Products:
In addition to MITEQ's GaAs FET and bipolar amplifiers we, offer a full line of IF Signal Processing Amplifiers: Logarithmic Amplifiers (successive detection log video amplifiers & detector log video amplifiers), Limiting Amplifiers, IF Gain Control and Automatic Gain Control Amplifiers (IF AGC).
Customize Your Amplifier:
Since 1969, MITEQ the pioneers in Amplifier development, have been customizing to our customers specific requirements. Whatever your amplifier requirements are, most likely we have built it.
All amplifier products are backed by MITEQ's 3-Year Warranty† and most are available as RoHs Compliant ††components.
|
NEW AMPLIFIER PRODUCTS |
|
Solid State Power Amplifier Drivers - Linear SSPA Drivers:
This new line of linear SSPA drivers, consists of three models covering all of the common satellite communication bands:
AMFLD-05700850-60-16P for C-/X-Band
AMFLD-12501850-60-18P for Ku-/DBS-Band
AMFLD-27003100-60-12P for Ka-Band
All three models have a common outline of 3.7” x 2.5” x 0.73”, SMA connectors for RF I/O and a multi-pin connector for supply, controls and detector output.
The linear drivers have a typical gain of 25 dB flat to within 1 dB, P1dB of 16 dBm and output IP3 of 26 dBm. Power monitor DC output and gain are well compensated, allowing for a compliant temperature range of –25 to +80 Degrees. Also incorporated is 30 dB of linear gain control. Drivers have a noise figure of less than 6dB, operate from a single 15V supply and draw 400 mA typical. |
New Series
 Febuary 2008 |
|
High Power Amplifier
Model AMF-5B-09001050-40-39P provides 7 Watts of X-band power. and a has an output P1dB of about 39 dBm from 9 to10.5 GHz and 38 dBm from 7.5 to 11 GHz. Gain is 36 dB minimum, ± 1 dB flat, and typical noise figure is 3.5 dB. This model operates from -10 to +60 ° C base temperature range and draws about 4A from 15 V. It has internal regulation and protection, and a footprint of only 3.3 inch x 3.3 inch. |
 |
|
Broadband Power Amplifier
Model AMF-2B-00030300-150-32P is a 2W amplifier, offering 20 dB of gain from 30 MHz to 3 GHz. The 24V voltage required is also internally gated by the external -5V to minimize any chance of damage. Very compact, 2 inch by 2 inch by 0.5 inch, housing has two SMA connectors and can be bolted on a heat sink. It draws 600 mA maximum and has a typical noise figure of about 8 dB and an input match of 1.5:1 maximum. |
 |
|
26-31 GHz 5W Power Amplifier
Model AMF-4B-26003100-100-36P is a connectorized high-power amplifier/module, covering 26-31 GHz and delivering approximately 5W of power. The Female K-type connectorized aluminum housing is 10mm (H) x 25mm (L) x 34mm (W). It is intended for bolting to a flat cooling surface or fins. Housing is environmentally sealed and EMI shielded. Hermetic sealing option is also available. Nominal small-signal gain is near 18 dB. Current draw is nominally 7A at P1dB from 6-6.5 VDC of supply and -1.25 VDC. |
 |
|
43.5-45.5 GHz Waveguide Amplifier
Model AMFWW-10F-43504550-50-25P has 35 dB minimum gain over the full band, with a minimum P1dB of 25 dBm. Typical noise figure is 5 dB. UG383/U waveguide input and output ports have a low VSWR of 1.5:1. It typically draws 1A from a 15V supply. Picture shown does not include isolators.
This amplifier has built in regulation, reverse bias protection and TTL control is optional. It includes a custom heat sink that can be removed. Other models from 15 dBm to 30 dBm are also available. |
 |
|
Q-Band Waveguide Limiter LNA
Model AMFW-5F-33004000-50-10P-4WL is a very low noise Q-Band waveguide front end. WR-28 waveguide input and output amplifier is very lightweight and has an extremely small profile and footprint. Aluminum alloy housing is environmentally sealed and EMI shielded. Hermetic sealing option is also available. LNA includes reverse voltage, over current and over temperature protection, in addition to full internal regulation.
This amplifier is capable of a minimum of 10 dBm of P1dB across the full band, 33-40 GHz. Built-in limiter can prevent damage from up to 5W of CW input.
Port VSWR is a maximum of 2.5:1 but typically 2:1 or less. Nominal small-signal gain is minimum 18 dB and maximum of 22 dB while the noise figure is less than 5 dB. Gain flatness is 2 dB peak-to-peak typical. Current draw is nominally 165 mA from a single positive 15V supply.
|
 |
|
8-18 GHz Broadband High Power Amplifier
Model AMF-2B-08001800-65-35P is a connectorized high power amplifier, covering octave bandwidth from 8-18 GHz and delivering approximately 3W of power and 2.5W from 6-18 GHz. In the band of 10-15 GHz, it delivers about 7W of P1dB. The SMA connectorized aluminum housing is 21mm (H) x 95mm (L) x 66mm (W). It is intended for bolting to a flat cooling surface or fins. Housing is environmentally sealed, EMI shielded and hermetic sealing option is also available. Power Amplifier includes reverse voltage protection, in addition to full internal regulation. A TTL-control pin is optional.
Nominal small-signal gain is 50 dB while noise figure is better than 5 dB across the band. Current draw is nominally 6.2A at P1dB from 12 to 15 VDC of supply. Output IP3 is a minimum of 44 dBm across the full band, closer to 47 dBm from 10–15 GHz. |
 |
|
| |
|
miteq.com now has a |
"New Search Feature"
This powerful amplifier engineering tool allows you to search our vast database of over 4,000 standard catalog amplifier models, so you can find the one amplifier that meets your specific requirements.
Features of this extraordinary tool include: the ability to compare amplifier specifications, view amplifier product data sheets and request quotes on-line. |
Amplifier Articles |
|
Surface-Mount
Amps Span
0.1 to 40.0 GHz
Click For PDF
Reprinted with
permission from the
July 2006 issue of Microwaves & RF |
|
|
Understanding Mismatch Effects In Power Combining Circuits
Click For PDF
Reprinted with
permission from
a 2006 issue of
Microwaves & RF |
|
|
